Dimensions (Unit : mm)
RPI-579N1E
Photointerrupter, General type
10
2.35
2-φ0.8
4-φ0.8
Absolute maximum ratings (Ta=25°C)
Through hole
Parameter
Symbol
Limits
Unit
mA
V
Applications
Forward current
IF
35
Printers
Facsimiles
AV equipment
Reverse voltage
VR
5
70
+0.05
−0
Power dissipation
PD
mW
V
8.95
Collector-emitter voltage
Emitter-collector voltage
Collector current
VCEO
VECO
IC
30
13.8
4.5
V
Gap
5
Features
0.8
0.5
30
mA
mW
°C
1) Heat resistance (170°C).
2) Small gap (0.5mm) and good accuracy.
3) Quick response time.
4) Filter against visible ray is built-in.
5) Kinked forming.
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperture
PC
80
A
A
Topr
Tstg
Tsol
−25 to +85
−40 to +85
260 / 3
Optical
center
°C
∗
°C / s
∗ 1mm from the body bottom.
Electrical and optical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
1.4
−
Max.
1.7
10
0.5
−
Unit
V
Conditions
VF
IR
−
−
IF=10mA
VR=5V
Forward voltage
(4-0.85)
4-0.4
(10)
2-0.45
µA
µA
nm
mA
V
Reverse current
Dark current
(2.54)
ICEO
−
−
VCE=10V
Peak sensitivity wavelength
Collector current
λ
P
−
800
−
−
Notes:
1. Unspecified tolerance
shall be 0.2 .
IC
VCE(sat)
tr
0.5
−
−
VCE=5V, IF=10mA
14(Bottom)
0.1
IF=10mA, IC=0.1mA
0.5
−
Collector-emitter saturation voltage
2. Measurement in the bracket is
that of lead pin at base the mold.
3. Dimension in parenthesis are
show for reference.
4. Please be carefully not to receive
external disturbing light because
the top and back face emitter and
detector element isn't covered by case.
Rise time
−
−
10
10
µs
µs
Cathode
Collector
Response time
VCC=5V, IF=10mA, RL=100Ω
−
Fall time
Peak light emitting wavelength
Response time
tf
IF=10mA
−
−
−
850
10
−
−
−
nm
µs
λP
∗ Non-coherent Infrared light emitting diode used.
VCC=5V, IC=1mA, RL=100Ω
tr tf
Anode
Emitter
∗ This product is not designed to be protected against electromagnetic wave.
2-φ0.7 0.1
2.35 0.1
6.6 0.1
λ
P
nm
−
Maximum sensitivity wavelength
800
Electrical and optical characteristics curves
1000
10
8
40
35
30
25
20
15
10
5
35
100
100
10
30
d
200
100
80
25
6
t
r
t
f
R =5kΩ
L
V
V
CE=30V
CE=20V
60
40
20
0
20
15
10
t
r
50
VCE=10V
t
f
4
R
L
=2kΩ
=1kΩ
t
f
1
t
r
R
L
20
10
2
0.1
5
0
0
0
10 20
50 100 200
500 1000 2000
0
1
2
3
4
5
25
0
25
50
75
100
−40 −20
0
20
40
60
80
100
0
5
10
15
20
25
30
35
0
0.5
1
1.5
2
2.5
DISTANCE : d (mm)
AMBIENT TEMPERATURE : Ta (°C)
FORWARD CURRENT : IF (mA)
COLLECTOR CURRENT : Ic (µA)
AMBIENT TEMPERATURE : Ta (°C)
FORWARD VOLTAGE : VF (V)
Fig.8 Response time vs.
collector current
Fig.9 Dark current vs. ambient
temperature
Fig.1 Relative output vs. distance ( )
Fig.2 Forward current falloff
Fig.3 Forward current vs. forward voltage
Fig.7 Collector current vs. forward current
100
90
80
70
60
50
40
30
20
10
0
10
9
140
120
Input
VCC
I =30mA
F
100
80
60
40
20
0
8
7
6
5
4
3
2
1
0
100
80
I
F
=25mA
Input
IF
=20mA
Output
90%
10%
RL
IF
=15mA
=10mA
60
40
Output
td
IF
tr
tf
IF
=5mA
20
0
td :
tr :
Delay time
Rise time (time for output current to rise
from 10% to 90% of peak current)
Fall time (time for output current to fall
from 90% to 10% of peak current)
0
1
2
3
4
5
-30 -20 -10
0
10 20 30 40 50 60 70 80 90
0
1
2
3
4
5
6
7
8
9
10
V)
-40
-20
0
20
40
60
80
100
tf :
COLLECTOR-EMITTER VOLTAGE : VCE
(
AMBIENT TEMPERATURE : Ta (°C)
DISTANCE : d (mm)
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
Fig.6 Relative output vs. ambient
temperature
Fig.4 Relative output vs. distance (
)
Fig.10 Output characteristics
Fig.11 Response time measurement circuit