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RPI-579N1E PDF预览

RPI-579N1E

更新时间: 2024-11-09 09:44:47
品牌 Logo 应用领域
罗姆 - ROHM 光电断路器开关插槽式开关输出元件
页数 文件大小 规格书
2页 72K
描述
Photointerrupter, General type

RPI-579N1E 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:2.31
Is Samacsys:NColl-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE最大暗电源:500 nA
最大正向电流:0.035 A间隙大小:5 mm
安装特点:THROUGH HOLE MOUNT功能数量:1
最大通态电压:30 V标称通态集电极电流:30 mA
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:TRANSISTOR OUTPUT SLOTTED SWITCH输出电路类型:Transistor
标称槽宽:5 mm表面贴装:NO
Base Number Matches:1

RPI-579N1E 数据手册

 浏览型号RPI-579N1E的Datasheet PDF文件第2页 
Dimensions (Unit : mm)  
RPI-579N1E  
Photointerrupter, General type  
10  
2.35  
2-φ0.8  
4-φ0.8  
Absolute maximum ratings (Ta=25°C)  
Through hole  
Parameter  
Symbol  
Limits  
Unit  
mA  
V
Applications  
Forward current  
IF  
35  
Printers  
Facsimiles  
AV equipment  
Reverse voltage  
VR  
5
70  
+0.05  
0  
Power dissipation  
PD  
mW  
V
8.95  
Collector-emitter voltage  
Emitter-collector voltage  
Collector current  
VCEO  
VECO  
IC  
30  
13.8  
4.5  
V
Gap  
5
Features  
0.8  
0.5  
30  
mA  
mW  
°C  
1) Heat resistance (170°C).  
2) Small gap (0.5mm) and good accuracy.  
3) Quick response time.  
4) Filter against visible ray is built-in.  
5) Kinked forming.  
Collector power dissipation  
Operating temperature  
Storage temperature  
Soldering temperture  
PC  
80  
A
A
Topr  
Tstg  
Tsol  
25 to +85  
40 to +85  
260 / 3  
Optical  
center  
°C  
°C / s  
1mm from the body bottom.  
Electrical and optical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
1.4  
Max.  
1.7  
10  
0.5  
Unit  
V
Conditions  
VF  
IR  
IF=10mA  
VR=5V  
Forward voltage  
(4-0.85)  
4-0.4  
(10)  
2-0.45  
µA  
µA  
nm  
mA  
V
Reverse current  
Dark current  
(2.54)  
ICEO  
VCE=10V  
Peak sensitivity wavelength  
Collector current  
λ
P
800  
Notes:  
1. Unspecified tolerance  
shall be 0.2 .  
IC  
VCE(sat)  
tr  
0.5  
VCE=5V, IF=10mA  
14(Bottom)  
0.1  
IF=10mA, IC=0.1mA  
0.5  
Collector-emitter saturation voltage  
2. Measurement in the bracket is  
that of lead pin at base the mold.  
3. Dimension in parenthesis are  
show for reference.  
4. Please be carefully not to receive  
external disturbing light because  
the top and back face emitter and  
detector element isn't covered by case.  
Rise time  
10  
10  
µs  
µs  
Cathode  
Collector  
Response time  
VCC=5V, IF=10mA, RL=100Ω  
Fall time  
Peak light emitting wavelength  
Response time  
tf  
IF=10mA  
850  
10  
nm  
µs  
λP  
Non-coherent Infrared light emitting diode used.  
VCC=5V, IC=1mA, RL=100Ω  
tr tf  
Anode  
Emitter  
This product is not designed to be protected against electromagnetic wave.  
2-φ0.7 0.1  
2.35 0.1  
6.6 0.1  
λ
P
nm  
Maximum sensitivity wavelength  
800  
Electrical and optical characteristics curves  
1000  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
35  
100  
100  
10  
30  
d
200  
100  
80  
25  
6
t
r
t
f
R =5kΩ  
L
V
V
CE=30V  
CE=20V  
60  
40  
20  
0
20  
15  
10  
t
r
50  
VCE=10V  
t
f
4
R
L
=2kΩ  
=1kΩ  
t
f
1
t
r
R
L
20  
10  
2
0.1  
5
0
0
0
10 20  
50 100 200  
500 1000 2000  
0
1
2
3
4
5
25  
0
25  
50  
75  
100  
40 20  
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
0
0.5  
1
1.5  
2
2.5  
DISTANCE : d (mm)  
AMBIENT TEMPERATURE : Ta (°C)  
FORWARD CURRENT : IF (mA)  
COLLECTOR CURRENT : Ic (µA)  
AMBIENT TEMPERATURE : Ta (°C)  
FORWARD VOLTAGE : VF (V)  
Fig.8 Response time vs.  
collector current  
Fig.9 Dark current vs. ambient  
temperature  
Fig.1 Relative output vs. distance ( )  
Fig.2 Forward current falloff  
Fig.3 Forward current vs. forward voltage  
Fig.7 Collector current vs. forward current  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
9
140  
120  
Input  
VCC  
I =30mA  
F
100  
80  
60  
40  
20  
0
8
7
6
5
4
3
2
1
0
100  
80  
I
F
=25mA  
Input  
IF  
=20mA  
Output  
90%  
10%  
RL  
IF  
=15mA  
=10mA  
60  
40  
Output  
td  
IF  
tr  
tf  
IF  
=5mA  
20  
0
td :  
tr :  
Delay time  
Rise time (time for output current to rise  
from 10% to 90% of peak current)  
Fall time (time for output current to fall  
from 90% to 10% of peak current)  
0
1
2
3
4
5
-30 -20 -10  
0
10 20 30 40 50 60 70 80 90  
0
1
2
3
4
5
6
7
8
9
10  
V)  
-40  
-20  
0
20  
40  
60  
80  
100  
tf :  
COLLECTOR-EMITTER VOLTAGE : VCE  
(
AMBIENT TEMPERATURE : Ta (°C)  
DISTANCE : d (mm)  
AMBIENT TEMPERATURE : Ta (°C)  
Fig.5 Power dissipation / collector power  
dissipation vs. ambient temperature  
Fig.6 Relative output vs. ambient  
temperature  
Fig.4 Relative output vs. distance (  
)
Fig.10 Output characteristics  
Fig.11 Response time measurement circuit  

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