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RN4981FE(T5LMAA,F) PDF预览

RN4981FE(T5LMAA,F)

更新时间: 2024-11-16 19:55:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
6页 300K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

RN4981FE(T5LMAA,F) 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code:unknown风险等级:5.71
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

RN4981FE(T5LMAA,F) 数据手册

 浏览型号RN4981FE(T5LMAA,F)的Datasheet PDF文件第2页浏览型号RN4981FE(T5LMAA,F)的Datasheet PDF文件第3页浏览型号RN4981FE(T5LMAA,F)的Datasheet PDF文件第4页浏览型号RN4981FE(T5LMAA,F)的Datasheet PDF文件第5页浏览型号RN4981FE(T5LMAA,F)的Datasheet PDF文件第6页 
RN4981FE  
TOSHIBA Transistor Silicon NPN · PNP Epitaxial Type  
(PCT Process) (Bias Resistor Built-in Transistor)  
RN4981FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
Two devices are incorporated into an Extreme-Super-Mini (6 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
Equivalent Circuit and Bias Resistor Values  
Q1  
Q2  
C
C
R1  
R1  
B
B
JEDEC  
JEITA  
E
E
TOSHIBA  
2-2N1G  
R1: 4.7 kΩ  
Weight: 0.003 g (typ.)  
R2: 4.7 kΩ  
(Q1, Q2 common)  
Marking  
Equivalent Circuit (top view)  
6
5
2
4
Q2  
3
6 A  
Q1  
1
Start of commercial production  
2000-05  
1
2014-03-01  

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