Datasheet > RN47A2JE(TE85L)

RN47A2JE(TE85L)

更新时间： 2024-02-17 00:09:54

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	290K
描述
RN47A2JE(TE85L)

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中文翻译

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技术参数
数据手册

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RN47A2JE(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

RN47A2JE(TE85L) 数据手册

RN47A2JE

TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type

(PCT Process) (Bias Resistor Built-in Transistor)

RN47A2JE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

Equivalent Circuit and Bias Resistor Values

1.EMITTER1

(E1)

(B1)

(E2)

2.BASE1

3.EMITTER2

4.COLLECTOR2 (C2)

5.COLLECTOR1 (C1)

BASE2

(B2)

JEDEC

JEITA

―

TOSHIBA

2-2P1E

R1: 22 kΩ (Q1, Q2 common)

R2: 22 kΩ (Q1, Q2 common)

Q1: RN1103F

Weight: 0.003g (typ.)

Q2: RN2103F

Marking

Equivalent Circuit (top view)

2 2

2007-11-01

12 3 4 5 6 7

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