Datasheet > RN47A7JE(TPL3,F)

RN47A7JE(TPL3,F)

更新时间： 2024-02-09 10:02:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
7页	222K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

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中文翻译

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技术参数
数据手册

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RN47A7JE(TPL3,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	50	元件数量：	2
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN47A7JE(TPL3,F) 数据手册

RN47A7JE

TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type

(PCT process) (Bias Resistor built-in Transistor)

RN47A7JE

Switching Applications

Unit: mm

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more compact

equipment and save assembly cost.

1.EMITTER1

2.BASE1

3.EMITTER2

4.COLLECTOR2 (C2)

5.COLLECTOR1 (C1)

(E1)

(B1)

(E2)

Equivalent Circuit and Bias Resistor Values

BASE2

(B2)

JEDEC

JEITA

―

TOSHIBA

2-2P1E

Weight: 3 mg (typ.)

Q2: R1: 4.7 kΩ, R2: 10 kΩ

Q1 R1: 10 kΩ, R2: 10 kΩ

Marking

Equivalent Circuit (top view)

2009-04-23

12 3 4 5 6 7

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