Datasheet > RN2423(TE85L,F)

RN2423(TE85L,F)

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	553K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59

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中文翻译

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数据手册

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RN2423(TE85L,F) 数据手册

RN2421~RN2427

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2421,RN2422,RN2423,RN2424

RN2425,RN2426,RN2427

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

High current type (I

= −800mA)

C(MAX)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Low V

CE (sat)

Complementary to RN1421~RN1427

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2421

RN2422

RN2423

RN2424

RN2425

RN2426

RN2427

2.2

4.7

2.2

4.7

JEDEC

JEITA

―

0.47

SC-59

2-3F1A

2.2

TOSHIBA

Weight: 0.012 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-Base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2421~2427

Collector-Emitter voltage

RN2421~2424

RN2425, 2426

RN2427

−10

Emitter-Base voltage

−5

EBO

−6

Collector current

−800

200

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2421~2427

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7 8

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