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RN2426(TE85L,F) PDF预览

RN2426(TE85L,F)

更新时间: 2024-11-11 19:43:27
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
8页 553K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59

RN2426(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
Factory Lead Time:12 weeks风险等级:5.75
最大集电极电流 (IC):0.8 A最小直流电流增益 (hFE):90
元件数量:1极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON
Base Number Matches:1

RN2426(TE85L,F) 数据手册

 浏览型号RN2426(TE85L,F)的Datasheet PDF文件第2页浏览型号RN2426(TE85L,F)的Datasheet PDF文件第3页浏览型号RN2426(TE85L,F)的Datasheet PDF文件第4页浏览型号RN2426(TE85L,F)的Datasheet PDF文件第5页浏览型号RN2426(TE85L,F)的Datasheet PDF文件第6页浏览型号RN2426(TE85L,F)的Datasheet PDF文件第7页 
RN2421~RN2427  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2421,RN2422,RN2423,RN2424  
RN2425,RN2426,RN2427  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z
z
z
z
z
z
High current type (I  
= 800mA)  
C(MAX)  
With built-in bias resistors  
Simplify circuit design  
Reduce a quantity of parts and manufacturing process  
Low V  
CE (sat)  
Complementary to RN1421~RN1427  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2421  
RN2422  
RN2423  
RN2424  
RN2425  
RN2426  
RN2427  
1
2.2  
4.7  
10  
1
2.2  
4.7  
10  
10  
10  
10  
JEDEC  
JEITA  
0.47  
1
SC-59  
2-3F1A  
2.2  
TOSHIBA  
Weight: 0.012 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-Base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2421~2427  
Collector-Emitter voltage  
RN2421~2424  
RN2425, 2426  
RN2427  
10  
Emitter-Base voltage  
V
V
5  
EBO  
6  
Collector current  
I
800  
200  
mA  
mW  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
c
RN2421~2427  
T
150  
j
T
stg  
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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