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RN2311(TE85L2) PDF预览

RN2311(TE85L2)

更新时间： 2024-09-28 20:59:23
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 244K
描述
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal

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中文翻译

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RN2311(TE85L2) 技术参数

生命周期：Obsolete零件包装代码：SC-70
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.79
其他特性：BUILT-IN BIAS RESISTOR最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：200 MHzBase Number Matches：1

RN2311(TE85L2) 数据手册

 浏览型号RN2311(TE85L2)的Datasheet PDF文件第2页浏览型号RN2311(TE85L2)的Datasheet PDF文件第3页浏览型号RN2311(TE85L2)的Datasheet PDF文件第4页浏览型号RN2311(TE85L2)的Datasheet PDF文件第5页 
RN2310,RN2311  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2310,RN2311  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN1310, RN1311  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
―
Characterisstic  
Collector-base voltage  
Symbol  
Rating  
−50  
Unit  
V
JEITA  
SC-70  
2-2E1A  
V
CBO  
V
CEO  
V
EBO  
TOSHIBA  
Collector-emitter voltage  
Emitter-base voltage  
−50  
V
Weight: 0.006g (typ.)  
−5  
V
Collector current  
I
−100  
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
T
150  
j
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= −50V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
−100  
−100  
400  
−0.3  
―
nA  
nA  
―
CBO  
CB  
EB  
CE  
E
I
―
= −5V, I = 0  
C
EBO  
DC current gain  
h
―
= −5V, I = −1mA  
120  
―
―
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Translation Frequency  
Collector output capacitance  
V
―
I
= −5mA, I = −0.25mA  
−0.1  
200  
3
V
C
B
f
―
V
V
= −10V, I = −5mA  
―
MHz  
pF  
T
CE  
CB  
C
C
―
= −10V, I = 0, f = 1MHz  
―
6
ob  
E
RN2310  
Input resistor  
3.29  
7
4.7  
10  
6.11  
13  
R1  
―
―
kΩ  
RN2311  
1
2007-11-01  
12345

中文翻译

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与RN2311(TE85L2)相关器件

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RN2312 TOSHIBA

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 		TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2312(TE85L) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN2312(TE85L2) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN2312(TE85R) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN2313 TOSHIBA

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 		TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2313(TE85L2) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN2313(TE85R) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN2314 ETC

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 		TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70
RN2314(TE85L) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN2315 ETC

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 		TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70

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