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RN1509(TE85L,F) PDF预览

RN1509(TE85L,F)

更新时间: 2024-11-23 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 288K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-25

RN1509(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:1.79最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):70元件数量:1
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
子类别:BIP General Purpose Small Signals表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

RN1509(TE85L,F) 数据手册

 浏览型号RN1509(TE85L,F)的Datasheet PDF文件第2页浏览型号RN1509(TE85L,F)的Datasheet PDF文件第3页浏览型号RN1509(TE85L,F)的Datasheet PDF文件第4页浏览型号RN1509(TE85L,F)的Datasheet PDF文件第5页浏览型号RN1509(TE85L,F)的Datasheet PDF文件第6页 
RN1507RN1509  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1507, RN1508, RN1509  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z Including two devices in SMV  
(super mini type with 5 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2507 to RN2509  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN1907  
RN1908  
RN1909  
10  
22  
47  
47  
47  
22  
JEDEC  
JEITA  
TOSHIBA  
2-3L1A  
Weight: 0.014g (typ.)  
Equivalent Circuit (Top View)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
V
V
CBO  
CEO  
RN1507 to 1509  
Collector-emitter voltage  
50  
RN1507  
RN1508  
RN1509  
6
7
Emitter-base voltage  
V
V
EBO  
15  
Collector current  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
*
300  
C
RN1507 to 1509  
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* : Total rating  
Start of commercial production  
1988-10  
1
2014-03-01  

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