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RN1509TE85L PDF预览

RN1509TE85L

更新时间: 2024-11-19 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 108K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN1509TE85L 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code:unknown风险等级:5.8
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 2.14最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):70
JESD-30 代码:R-PDSO-G5元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

RN1509TE85L 数据手册

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