Datasheet > RN1444(TE85R)

RN1444(TE85R)

更新时间： 2024-11-13 20:36:39

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
9页	696K
描述
TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

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技术参数
数据手册

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RN1444(TE85R) 技术参数

生命周期：	Obsolete	零件包装代码：	SOT-23
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.77
其他特性：	BUILT-IN BIAS RESISTOR	最大集电极电流 (IC)：	0.3 A
集电极-发射极最大电压：	20 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	200	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	30 MHz	Base Number Matches：	1

RN1444(TE85R) 数据手册

RN1441∼RN1444

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1441,RN1442,RN1443,RN1444

Unit in mm

Muting and Switching Applications

z High emitter-base voltage: V

= 25V (min)

EBO

z High reverse h : reverse h

= 150 (typ.) (V = −2V, I = −4mA)

CE C

z Low on resistance: R

= 1Ω (typ.) (I = 5mA)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

Equivalent Circuit

JEDEC

JEITA

TO-236MOD

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Marking

classification

Characteristic

Collector-base voltage

Symbol

Rating

Unit

Type No.

CBO

CEO

EBO

RN1441

RN1442

RN1443

RN1444

Collector-emitter voltage

Emitter-base voltage

Collector current

300

°C

Collector power dissipation

Junction temperature

Storage temperature range

200

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7...9

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与RN1444(TE85R)相关器件

型号	品牌	获取价格	描述	数据表
RN1444(TE85R2)	TOSHIBA	获取价格	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1444A	TOSHIBA	获取价格	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59,
RN1444-A	TOSHIBA	获取价格	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP Ge
RN1444A(TE85L2)	TOSHIBA	获取价格	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1444A(TE85R)	TOSHIBA	获取价格	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1444A(TE85R2)	TOSHIBA	获取价格	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1444B	ETC	获取价格	TRANSISTOR \| 20V V(BR)CEO \| 300MA I(C) \| SC-59
RN1444-B	TOSHIBA	获取价格	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP Ge
RN1444B(TE85L)	TOSHIBA	获取价格	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1444B(TE85R)	TOSHIBA	获取价格	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO

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