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RMB2S-E3 PDF预览

RMB2S-E3

更新时间: 2024-11-05 20:47:35
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 195K
描述
DIODE 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN, Bridge Rectifier Diode

RMB2S-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-269AA
包装说明:R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.15
其他特性:UL RECOGNIZED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.25 VJEDEC-95代码:TO-269AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.15 µs子类别:Bridge Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

RMB2S-E3 数据手册

 浏览型号RMB2S-E3的Datasheet PDF文件第2页浏览型号RMB2S-E3的Datasheet PDF文件第3页浏览型号RMB2S-E3的Datasheet PDF文件第4页 
RMB2S & RMB4S  
Vishay General Semiconductor  
Miniature Glass Passivated Fast Recovery  
Surface Mount Bridge Rectifier  
TO-269AA (MBS)  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
0.5 A  
200 V, 400 V  
30 A  
~
~
150 ns  
VF  
1.25 V  
Tj max.  
150 °C  
~
~
Features  
Mechanical Data  
• UL Recognition, file number E54214  
• Saves space on printed circuit boards  
• Ideal for automated placement  
• Fast recovery, low switching loss  
• High surge current capability  
Case: TO-269AA (MBS)  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Polarity: As marked on body  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Power Supply, Lighting Ballaster, Battery  
Charger, Home Appliances, Office Equipment, and  
Telecommunication applications  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Device marking code  
Symbol  
RMB2S  
2R  
RMB4S  
4R  
Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
200  
400  
V
V
V
Maximum RMS voltage  
140  
200  
280  
400  
Maximum DC blocking voltage  
Maximum average forward output rectified current at TA = 30 °C  
0.5(1)  
0.8(2)  
30  
IF(AV)  
A
A
on glass-epoxy P.C.B.  
on aluminum substrate  
Peak forward surge current 8.3 msec single half sine-wave  
superimposed on rated load  
IFSM  
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
5.0  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number 88705  
12-Jul-05  
www.vishay.com  
1

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