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RMB2S-E3/80 PDF预览

RMB2S-E3/80

更新时间: 2024-11-05 15:49:47
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 100K
描述
Diode Rectifier Bridge Single 200V 0.8A 4-Pin TO-269AA T/R

RMB2S-E3/80 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-269AA包装说明:R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.24其他特性:UL RECOGNIZED
最小击穿电压:200 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.25 VJEDEC-95代码:TO-269AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):250
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.15 µs子类别:Bridge Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

RMB2S-E3/80 数据手册

 浏览型号RMB2S-E3/80的Datasheet PDF文件第2页浏览型号RMB2S-E3/80的Datasheet PDF文件第3页浏览型号RMB2S-E3/80的Datasheet PDF文件第4页 
RMB2S, RMB4S  
Vishay General Semiconductor  
www.vishay.com  
Miniature Glass Passivated Fast Recovery  
Surface Mount Bridge Rectifier  
FEATURES  
• UL recognition, file number E54214  
~
• Saves space on printed circuit boards  
• Ideal for automated placement  
• Fast recovery, low switching loss  
• High surge current capability  
~
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
~
~
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for power supply, lighting ballaster, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
TO-269AA (MBS)  
PRIMARY CHARACTERISTICS  
IF(AV)  
0.5 A  
MECHANICAL DATA  
VRRM  
IFSM  
200 V, 400 V  
30 A  
Case: TO-269AA (MBS)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
trr  
150 ns  
VF at IF = 0.4 A  
TJ max.  
1.25 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
150 °C  
Package  
Diode variations  
TO-269AA (MBS)  
Quad  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked on body  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
RMB2S  
2R  
RMB4S  
4R  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
400  
V
V
V
140  
280  
Maximum DC blocking voltage  
200  
400  
on glass-epoxy PCB (1)  
on aluminum substrate (2)  
0.5  
0.8  
Maximum average forward output  
rectified current at TA = 30 °C  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Rating for fusing (t < 8.3 ms)  
I2t  
5.0  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Notes  
(1)  
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads  
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad  
(2)  
Revision: 19-Aug-13  
Document Number: 88705  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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