Datasheet > RM60P04Y

RM60P04Y

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	807K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 106 mOhms;Total Gate Charge (nQ) typ : 25 nQ;Maximum Power Dissipation (W) : 1.5 W;Vgs(th) (typ) : 2.2 V;Input Capacitance (Ciss) : 930 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM60P04Y 数据手册

RM60P04Y

P-Channel Enhancement Mode Power MOSFET

Description

The RM60P04Y uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge .This

device is well suited for use as a load switch or in PWM

applications.

Schematic diagram

Marking and pin Assignment

SOT-23-3L top view

General Features

V_DS=-60V,I_D=-4A

R_DS(ON)<120mΩ @ V_GS=-10V

R_DS(ON)<170mΩ @ V_GS=-4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

P/N suffix V means AEC-Q101 qualified, e.g:RM60P04YV

Halogen-free

Application

Load switch

PWM application

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000 units

60P04Y

RM60P04Y

SOT-23-3L

Ø180mm

8 mm

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Pulsed Drain Current

±20

V^GS

-4

I_D

-12

1.5

I_DM

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance, Junction-to-Ambient^{(Note 2)}

R_θJA

83.3

2019-02/15

REV:

12 3 4 5 6 7

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