Datasheet > RM60P60T2

RM60P60T2

更新时间： 2024-06-27 12:12:08

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	539K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 61 A;Rds-on (typ) (mOhms) : 18 mOhms;Total Gate Charge (nQ) typ : 72 nQ;Maximum Power Dissipation (W) : 171 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 4854 pF;Polarity : P-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM60P60T2 数据手册

RM60P60T2

P-Channel Enhancement Mode Power MOSFET

Description

The RM60P60T2 uses advanced trench technology and design

to provide excellent R_DS(ON)with low gate charge. This device is

suitable for use in PWM, load switching and general purpose

applications.

General Features

V_DS=-60V,I_D=-61A

R_DS(ON)< 22mΩ @ V _GS= -10V

R_DS(ON)< 40mΩ @ V _GS= - 6V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Special designed for convertors and power controls

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Special process technology for high ESD capability

Schematic diagram

Application

Power switching application

Hard switched and High frequency circuits

Uninterruptible power supply

Halogen-free

TO-220

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

60P60

RM60P60T2

TO-220

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

-61

-38.6

-244

I_D

I_D(100 )

I_DM

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

Maximum Power Dissipation

Peak diode recovery voltage

Derating factor

171

V/ns

P_D

dv/dt

1.37

Single pulse avalanche energy^{(Note 5)}

E_AS

245

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2022-06/57

REV:C

12 3 4 5

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