Datasheet > RM500N80TL

RM500N80TL

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	159K
描述
Vdss (V) : 80 V;Id @ 25C (A) : 500 A;Rds-on (typ) (mOhms) : 0.7 mOhms;Total Gate Charge (nQ) typ : 388 nQ;Maximum Power Dissipation (W) : 450 W;Input Capacitance (Ciss) : 20427 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TOLL-8L

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RM500N80TL 数据手册

RM500N80TL

N-Channel Enhancement Mode MOSFET

Features

ฺ

ู

450 W

BV 80 VˈP^tot

I^D500 A

ู

R^DS(ON)ู 0.85 mΩ @ VGS = 10 V

R^DS(ON)ู 1.25 mΩ @ VGS = 6 V

Surface-mounted package

Super Trench

Symbol

Tj max 175ഒ

Dꢀ

Advanced trench cell design

MSL1

Applications

Power appliances

E-Tool appliances

High power inverter system

BMS

GS S S S SꢀS

Top Viewꢀ

TOLL-8Lꢀ

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM500N80TL

TOLL-8L

2000

TBD

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Symbol

V_DS

V_GS

I_D*

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Conditions

Min Max Unit

T_C= 25 ȭ

500

355

1200

450

T_C= 25 ȭ, V_GS= 10 V

T_C= 100 ȭ, V_GS= 10 V

T_C= 25 ȭ, V_GS= 10 V

T_C= 25 ȭ

I_D*

Drain Current (DC)

I_DM*^,**

P_tot*

T_stg

Drain Current (Pulsed)

Drain Power Dissipation

Storage Temperature

Junction Temperature

Diode Forward Current

- 55 175

T_J

175

500

I_S

T_C= 25 ȭ

E_AS*

Single Pulsed Avalanche Energy V_DD= 50 V , L= 1.0 mH

Thermal Resistance-Junction to Ambient

3042 mJ

R_θJA

ȭ/W

R_θJC

Thermal Resistance-Junction to Case

0.33

Surface Mounted on 1 in²pad area, t ꢀ 10 sec

Pulse width ꢀ 300 ꢁs, duty cycle ꢀ 2 %

Notes:

2023-04/113

REV:O

*** Limited by bonding wire

12 3 4 5 6 7

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