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RM50C1A-12S PDF预览

RM50C1A-12S

更新时间: 2024-11-12 20:05:31
品牌 Logo 应用领域
三菱 - MITSUBISHI 快速恢复二极管局域网
页数 文件大小 规格书
3页 52K
描述
Rectifier Diode, 1 Phase, 2 Element, 50A, 600V V(RRM), Silicon,

RM50C1A-12S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:R-PUFM-X3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.88
其他特性:FREE WHEELING DIODE应用:FAST RECOVERY
外壳连接:ISOLATED配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PUFM-X3最大非重复峰值正向电流:1000 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.2 µs表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RM50C1A-12S 数据手册

 浏览型号RM50C1A-12S的Datasheet PDF文件第2页浏览型号RM50C1A-12S的Datasheet PDF文件第3页 
MITSUBISHI FAST RECOVERY DIODE MODULES  
RM50DA/CA/C1A-XXS  
MEDIUM POWER, HIGH FREQUENCY USE  
INSULATED TYPE  
RM50DA/CA/C1A-XXS  
IDC  
DC current .................................. 50A  
VRRM Repetitive peak reverse voltage  
......................300/600V  
trr  
Reverse recovery time .............0.4µs  
Insulated Type  
APPLICATION  
Free wheel use, Welder  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
53.5  
43.3  
16  
CA  
C1A  
DA  
R6  
φ5.3  
8
3–M4  
3.5  
33  
3.5  
LABEL  
Feb.1999  

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