Datasheet > RM40N200TI

RM40N200TI

更新时间： 2025-07-30 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	197K
描述
Vdss (V) : 200 V;Id @ 25C (A) : 40 A;Rds-on (typ) (mOhms) : 36.4 mOhms;Total Gate Charge (nQ) typ

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RM40N200TI 数据手册

RM40N200TI

N-Channel Enhancement Mode Power MOSFET

Description

The RM40N200TI uses advanced trench technology and design

to provide excellent RDS(ON) with low gate charge. It can be

used in a wide variety of applications.

General Features

ƽ V_DS=200V,I_D=40A

R_DS(ON)<41mꢀ @ V_GS=10V

Schematic diagram

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

TO-220F top view

P/N suffix V means AEC-Q101 qualified, e.g:RM40N200TIV

100% UIS TESTED!

100% ꢀVds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

40N200

RM40N200TI

TO-220F

-ꢀ

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V_DS

Limit

200

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V_GS

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

160

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.4

W/ć

E_AS

480

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 175

2019-03/15

REV:O

12 3 4 5 6 7

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