Datasheet > RM40N40DF

RM40N40DF

更新时间： 2024-06-27 12:12:38

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	257K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 40 A;Rds-on (typ) (mOhms) : 8.5 mOhms;Total Gate Charge (nQ) typ : 50 nQ;Maximum Power Dissipation (W) : 30 W;Input Capacitance (Ciss) : 2000 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L;Certified (AEC-Q101...etc) : AEC-Q101

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RM40N40DF 数据手册

RM40N40DF

N-Channel Enhancement Mode Power MOSFET

Description

The RM40N40DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS=40V,I_D=40A

R_DS(ON)<10 mΩ @ V_GS=10V

Schematic diagram

R_DS(ON)<15 mΩ @ V_GS=4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Special process technology for high ESD capability

Marking and pin assignment

Application

Load switching

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM40N40DFV

DFN5X6-8L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

40N40

RM40N40DF

DFN5X6-8L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±±0

V^GS

±8

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

)

190

I_DM

Maximum Power Dissipation

Derating factor

P_D

0.43

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note ±)}

R_θJC

5.3

2019-08/15

REV:B

12 3 4 5 6 7

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