Datasheet > RM40N600T7

RM40N600T7

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1021K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 40 A;Total Gate Charge (nQ) typ : 149 nQ;Maximum Power Dissipation (W) : 306 W;Input Capacitance (Ciss) : 1530 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

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RM40N600T7 数据手册

RM40N600T7

600V, 40A, Trench FS II IGBT

General Description:

Using RECTRON's proprietary trench design and advanced FS(field stop)

second generation technology, the 600V Trench FS II IGBT offers

superior conduction and switching performances, and easy parallel

operation;

Features

Trench FSII Technology offering

 Very low V_CE（sat）

Schematic diagram

 High speed switching

 Positive temperature coefficient in V_CE（sat）

 Very tight parameter distribution

 High ruggedness, temperature stable behavior

Application

 Uninterruptible Power Supplies（UPS）

 Welding Converters

 Inverters

TO-247-3L top view

Package Marking and Ordering Information

Device

V_CE

I_C

Device Marking

Device Package

RM40N600T7

600V

40A

40N600

TO-247-3L

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

V_CES

Rating

600

Units

Collector-Emitter Voltage

Gate- Emitter Voltage

Collector Current

V_GES

±30

I_C

Collector Current @T_C= 100 °C

I_CM

I_F

Pulsed Collector Current

160

Diode Continuous Forward Current @T_C= 100 °C

Diode Maximum Forward Current

I_FM

150

Power Dissipation @ T_C= 25°C

306

℃

P_D

Power Dissipation @T_C= 100 °C

122

T_J,T_stg

T_L

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

-55 to +150

260

Short circuit withstand time V_GE=15.0V, V_CC≤400V, Allowed number

of short circuits<1000Time between short circuits:≥1.0s,T_vj≤150℃

t_sc

2016-08

REV:O15

12 3 4 5 6 7

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