Datasheet > RLT635_100G

RLT635_100G

更新时间： 2024-09-30 12:32:31

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
2页	109K
描述
High Power Visible Laser Diode

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RLT635_100G 数据手册

RLT635-100G

TECHNICAL DATA

High Power Visible Laser Diode

Emitting Aperatur: 1x100 µm²

Lasing wavelength: 635 nm, typ.

Max. optical power: 100 mW

Package: 9 mm

PIN CONNECTION:

1) Laserdiode cathode

2) Laserdiode anode

3) n.c.

Absolute Maximum Ratings (Tc = 25°C)

CHARACTERISTIC

Optical Output Power

LD Reverse Voltage

PD Reverse Voltage

Operating Temperature

Storage Temperature

SYMBOL

P_o

RATING

UNIT

100

V_R(LD)

V_R(PD)

T_op

0 .. +25

-10 .. +60

°C

T_stg

°C

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC

Optical Output Power

Threshold Current

Operation Current

Operation Voltage

Slope Efficiency

SYMBOL TEST CONDITION

MIN

TYP MAX UNIT

P_o

I_th

100

500

700

2.5

I_op

V_op

P_o= 100 mW

0.5

625

W/A

Lasing Wavelength

Spectral Wavelength

Beam Divergence

Polarization

λ_p

∆λ

Θ_//

P_o= 100 mW

635

645

Wavelength Temp.

Coefficient

Po = 100 mW

0.3

nm/°C

03.08.2010

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