Datasheet > RLT1300-30G

RLT1300-30G

更新时间： 2024-01-11 00:33:45

品牌	Logo	应用领域
申泰 - SAMTEC		二极管激光二极管
页数	文件大小	规格书
2页	107K
描述
High Power Infrared Laser Diode

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RLT1300-30G 数据手册

RLT1300-30G

TECHNICAL DATA

High Power Infrared Laser Diode

Features

•

Structure: GaInAsP/InP SQW strucutre

Peak Wavelength : single mode, typ. 1300 nm

Optical Ouput Power: 30 mW

Package: 9 mm

Electrical Connection

Pin Configuration

Bottom View

n-type

Function

LD Cathode

LD Anode, PD Cathode

PD Anode

Absolute Maximum Ratings (T_C=25°C)

Item

Symbol

Value

200

1.5

Unit

CW Output Power

P_O

I_f

U_R(LD)

U_R(PD)

T_C

°C

Maximum LD Current

LD Reverse Voltage

PD Reverse Voltage

Operating Case Temperature

Storage Temperature

-20 … +40

-40 … +70

T_stg

Specifications (T_C=25°C)

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Optical Specification

CW Output Power

Peak Wavelength

P_O

λ_P

θ_║

θ_┴

W x H

1300

1 x 5

1330

deg

µm

P_O= 30 mW

1270

FWHM Beam Divergence

Emitting Aperature

Electrical Specification

Threshold Current

Operating Current

Operating Voltage

Monitor Current

I_th

I_op

U_op

I_m

160

P_O= 30 mW

>20

500

1500

µA

The above specifications are for reference purpose only and subjected to change without prior notice.

29.11.2010

RLT1300-30G

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