Datasheet > RLT1550-15G

RLT1550-15G

更新时间： 2022-04-21 10:23:19

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
1页	54K
描述
High Power Infrared Laserdiode

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RLT1550-15G 数据手册

ROITHNER LASERTECHNIK

A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA

TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44

e-mail: office@roithner-laser.com http://www.roithner-laser.com

RLT1550-20G TECHNICAL DATA

High Power Infrared Laserdiode

NOTE!

Structure: GaInAsP/InP SQW structure

Lasing wavelength: 1550 nm, single mode

Typ. optical power: 20 mW

LASERDIODE

MUST BE COOLED!

Package: 9 mm (SOT-148)

PIN CONNECTION:

1) Laser diode cathode

2) Laser diode anode and photodiode cathode

3) Photodiode anode

Absolute Maximum Ratings (Tc=25°C)

CHARACTERISTIC

Maximum LD Current

Optical Output Power

LD Reverse Voltage

PD Reverse Voltage

Operating Temperature

Storage Temperature

SYMBOL

RATING

200

UNIT

°C

P_o

V_R(LD)

V_R(PD)

T_C

1.5

-20 .. +40

-40 .. +85

T_STG

°C

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT

Lasing Aperture

P_o

1 x 5

160

µm²

Optical Output Power

Threshold Current

Operation Current

Forward Voltage

Lasing Wavelength

Beam Divergence

Monitor Current

I_op

U_f

l _p

q_//

q_^

I_m

P_o= 20 mW

1520 1550 1580

µA

> 20 100

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