RLT1300-50G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
•
•
•
•
Structure: GaInAsP/InP SQW strucutre
Peak Wavelength : single mode, typ. 1300 nm
Optical Ouput Power: 50 mW
Package: 9 mm
Electrical Connection
Pin Configuration
Bottom View
n-type
PIN
Function
1
2
3
LD Cathode
LD Anode, PD Cathode
PD Anode
Absolute Maximum Ratings (TC=25°C)
Item
Symbol
Value
60
260
1.5
6
Unit
CW Output Power
PO
If
UR(LD)
UR(PD)
TC
mW
mA
V
V
°C
°C
Maximum LD Current
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
-20 … +40
-40 … +70
Tstg
Specifications (TC=25°C)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Optical Specification
CW Output Power
Peak Wavelength
PO
λP
Δλ
θ║
θ┴
cw
-
50
1300
6
25
40
-
1330
8
-
45
mW
nm
nm
deg
deg
µm
PO = 40 mW
PO = 40 mW
PO = 40 mW
PO = 40 mW
1270
-
-
Spectral Width (FWHM)
FWHM Beam Divergence
35
Emitting Aperature
Electrical Specification
Threshold Current
Operating Current
Operating Voltage
Monitor Current
W x H
1 x 5
Ith
Iop
Uop
Im
cw
-
-
-
35
-
1.5
500
55
230
2
mA
mA
V
PO = 40 mW
PO = 40 mW
PO = 40 mW
>20
1500
µA
The above specifications are for reference purpose only and subjected to change without prior notice.
29.11.2010
RLT1300-50G
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