Datasheet > RLT1060-50G

RLT1060-50G

更新时间： 2024-01-20 21:27:22

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
2页	116K
描述
Infrared Laser Diode

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RLT1060-50G 数据手册

RLT1060-50G

TECHNICAL DATA

Infrared Laser Diode

Features

•

Lasing Mode Structure: Single mode

Peak Wavelength : typ. 1060 nm

Optical Ouput Power: 50 mW

Package: 9 mm

Electrical Connection

Pin Configuration

Bottom View

n-type

Function

LD Cathode

LD Anode, PD Cathode

PD Anode

Absolute Maximum Ratings (T_C=25°C)

Item

Symbol

Value

110

Unit

CW Output Power

P_O

I_f

T_C

T_stg

°C

Maximum LD Current

Operating Case Temperature

Storage Temperature

-20 … +40

-40 … +70

°C

Specifications (T_C=25°C)

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Optical Specification

CW Output Power

Peak Wavelength

P_O

λ_P

Δλ

θ_║

θ_┴

1060

deg

µm

P_O= 50 mW

1050

1070

Spectral Width (FWHM)

7.5

FWHM Beam Divergence

Emitting Aperature

Electrical Specification

Threshold Current

Operating Current

Operating Voltage

Monitor Current

W x H

I_th

I_op

U_op

I_m

µA

P_O= 50 mW

Monitor Voltage

U_m

The above specifications are for reference purpose only and subjected to change without prior notice.

04.11.2011

RLT1060-50G

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