Datasheet > RJU60C6SDPQ-T2

RJU60C6SDPQ-T2

更新时间： 2024-02-07 23:44:27

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	81K
描述
Fast Recovery Diode

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中文翻译

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数据手册

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RJU60C6SDPQ-T2 数据手册

Preliminary Data Sheet

RJU60C6SDPQ-A0

600V - 25A - Single Diode

Fast Recovery Diode

R07DS1268EJ0110

Rev.1.10

May 29, 2015

Features

•

Fast reverse recovery time: t_rr= 100 ns typ. (at I_F= 30 A, di/dt = −100 A/μs)

Low forward voltage: V_F= 1.4 V typ. (at I_F= 50 A)

Low reverse current: I_R= 25 μA max. (at V_R= 600 V)

Outline

RENESAS Package code: PRSS0003ZH-A

(Package name: TO-247A)

2, 4

1. Anode

2. Cathode

3. Anode

4. Cathode

Absolute Maximum Ratings

(Tc = 25°C)

Item

Maximum reverse voltage

Average rectified forward current

Symbol

V_RM

Ratings

Unit

600

Continuous forward current

Tc = 25°C

Tc = 100°C

I_F

Peak surge forward current

I_FSM

θj-cd

140

Junction to case thermal resistance

Junction temperature

2.0

°C /W

°C

150

Storage temperature

Tstg

–55 to +150

Electrical Characteristics

(Ta = 25°C)

Item

Forward Voltage

Symbol

Min

⎯

Typ

Max

Unit

Test conditions

I_F= 50 A

1.4

⎯

2.0

⎯

Reverse current

μA

V_R= 600 V

Reverse Recovery Time

trr

⎯

100

I_F= 30 A, di/dt = –100 A/μs

R07DS1268EJ0110 Rev.1.10

May 29, 2015

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