Datasheet > RJU65F28DWA

RJU65F28DWA

更新时间： 2024-11-19 14:56:15

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
5页	217K
描述
High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency

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RJU65F28DWA 数据手册

Preliminary Datasheet

RJU65F28DWA / RJU65F28DWS

650V - 200A - Fast Recovery Diode

Application: Inverter

R07DS1486EJ0201

Rev.2.01

Apr.10.2020

Features



Low forward voltage

V_F= 1.7 V typ. (at I_F= 200 A, Tc = 25C)

Fast recovery (soft recovery)

t_rr= 110 ns typ. (at I_F= 100 A, di/dt = 100 A/s, Tc = 25C)



Outline

Die

Wafer

1. Cathode (The back)

2. Anode

Absolute Maximum Ratings

(Tc = 25°C unless otherwise noted)

Item

Symbol

Ratings

Unit

Maximum reverse voltage

V_RM

650

400

200

175

Notes1

Forward current

Tc = 25C

I_F

Notes1

Tc = 100C

I_F

Tj ^Notes2

Junction temperature

C

Notes: 1. Depends on thermal properties of assembly.

2. Please use this device in the thermal condition which the junction temperature does not exceed 175 C.

IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175 C.

3. Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may

affect a reliability even if it is within the absolute maximum ratings. Please consider derating condition for

appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for

Handling and Usage of Semiconductor Devices) and individual reliability data.

R07DS1486EJ0201 Rev.2.01

Apr.10.2020

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