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RJU60C6WDPK-M0 PDF预览

RJU60C6WDPK-M0

更新时间: 2024-09-25 12:31:47
品牌 Logo 应用领域
瑞萨 - RENESAS 二极管超快速恢复二极管
页数 文件大小 规格书
4页 65K
描述
600V - 50A - Dual Diode Super Fast Recovery Diode

RJU60C6WDPK-M0 数据手册

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Preliminary Datasheet  
RJU60C6WDPK-M0  
R07DS0875EJ0100  
Rev.1.00  
600V - 50A - Dual Diode  
Super Fast Recovery Diode  
Sep 03, 2012  
Features  
Fast reverse recovery time: trr = 100 ns typ. (at IF = 30 A, di/dt = 100 A/s) Per Leg  
Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg  
Low reverse current: IR = 1 A max. (at VR = 600 V) Per Leg  
Outline  
RENESAS Package code: PRSS0004ZH-A  
(Package name: TO-3PSG)  
4
2, 4  
1. Anode  
2. Cathode  
3. Anode  
4. Cathode  
1
3
1
2
3
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Ratings  
600  
Unit  
V
Maximum reverse voltage  
VRM  
Note1  
Continuous forward current  
(Per Leg/Device)  
Tc = 25C  
Tc = 100C  
IF  
50/100  
25/50  
140/280  
1.28  
A
Note1  
IF  
A
Note1  
Peak surge forward current (Per Leg/Device)  
Junction to case thermal resistance  
Junction temperature  
IFSM  
A
j-cd  
Tj  
C/W  
C  
C  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. Per leg/device  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Forward voltage  
Symbol  
Min  
Typ  
1.4  
Max  
Unit  
Test conditions  
IF = 50 A  
VR = 600 V  
Note2  
VF  
2.0  
1/2  
V
Note1  
Reverse current  
IR  
A  
ns  
Note2  
Reverse recovery time  
Notes: 1. Per leg/device  
2. Per leg  
trr  
100  
IF = 30 A, di/dt = 100 A/s  
R07DS0875EJ0100 Rev.1.00  
Sep 03, 2012  
Page 1 of 3  

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