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RJK0371DSP PDF预览

RJK0371DSP

更新时间: 2024-11-11 06:07:59
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
4页 81K
描述
Silicon N Channel Power MOS FET Power Switching

RJK0371DSP 数据手册

 浏览型号RJK0371DSP的Datasheet PDF文件第2页浏览型号RJK0371DSP的Datasheet PDF文件第3页浏览型号RJK0371DSP的Datasheet PDF文件第4页 
RJK0371DSP  
Silicon N Channel Power MOS FET  
Power Switching  
REJ03G1663-0201  
Rev.2.01  
Apr 24, 2008  
Features  
Capable of 4.5 V gate drive  
Low drive current  
High density mounting  
Low on-resistance  
RDS(on) = 14 mtyp. (at VGS = 10 V)  
Pb-free  
Outline  
RENESAS Package code: PRSP0008DD-D  
(Package name: SOP-8<FP-8DAV>)  
5 6 7 8  
D D  
D D  
5
6
7
8
1, 2, 3  
4
Source  
Gate  
4
4
G
3
2
1
5, 6, 7, 8 Drain  
S S S  
1
2 3  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
30  
V
V
±20  
Drain current  
8
A
Note1  
Drain peak current  
ID(pulse)  
IDR  
64  
A
Body-drain diode reverse drain current  
Avalanche current  
8
A
Note 2  
IAP  
7
4.9  
A
Note 2  
Avalanche energy  
EAR  
mJ  
W
Channel dissipation  
Pch Note3  
θch-a Note3  
Tch  
1.8  
Channel to ambient thermal impedance  
Channel temperature  
69.4  
°C/W  
°C  
150  
Storage temperature  
Tstg  
–55 to +150  
°C  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tch = 25°C, Rg 50 Ω  
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s  
REJ03G1663-0201 Rev.2.01 Apr 24, 2008  
Page 1 of 3  

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