Datasheet > RJH65T04BDPM-A0

RJH65T04BDPM-A0

更新时间： 2023-12-20 18:44:36

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
12页	209K
描述
IGBT 650V 30A TO-3PFP Built-In FRD

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数据手册

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RJH65T04BDPM-A0 数据手册

RJH65T04BDPM-A0

Absolute Maximum Ratings

(Tc = 25 C)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

V_GES

I_C

Ratings

650

Unit

±30

Collector current

Tc = 25 C

Tc = 100 C

I_C

Notes1

Collector peak current

I_C(peak)

120

Notes2

Clamped inductive load current

I_CL

120

Diode forward current

Tc = 25 C

Tc = 100 C

I_F

100

Peak surge forward current

Collector power dissipation

Junction temperature

IFSM ^Notes3

230

Notes4

P_C

C

Tj ^Notes4

175

Storage temperature

Tstg

–55 to +150

Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a

reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate

reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage

of Semiconductor Devices) and individual reliability data.

Notes: 1. PW  10 s, duty cycle  1 %

2. V_GE= 15 V

3. PW = 3 ms (sine half wave, Non-repetitive,1 cycle), Tj = 150 degC

4. Please use this device in the thermal conditions which the junction temperature does not exceed 175 C

Renesas IGBT Application Note is disclosed about reliability test and condition up to 175 C

Thermal Resistance Characteristics

(Tc = 25 C)

Item

Symbol

R_th(j-c)

Max. Value ^Notes5

Unit

C/W

Junction to case thermal resistance (IGBT)

Junction to case thermal resistance (Diode)

2.3

R_th(j-c)

2.35

Notes: 5. Designed target value on Renesas measurement condition. (Not tested)

R07DS1366EJ0200 Rev.2.00

Oct.05.2022

Page 2 of 11

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