Datasheet > RJH65T04BDPM-A0

RJH65T04BDPM-A0

更新时间： 2023-12-20 18:44:36

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
12页	209K
描述
IGBT 650V 30A TO-3PFP Built-In FRD

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数据手册

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RJH65T04BDPM-A0 数据手册

RJH65T04BDPM-A0

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage (Typical)

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage (Typical)

Tc = 25C

Tc = 150C

Pulse Test

I_C= 60 A

30 A

15 A

I_C= 60 A

30 A

15 A

Gate to Emitter Voltage V_GE(V)

Gate to Emitter Cutoff Voltage

vs. Case Temperature (Typical)

Collector to Emitter Saturation Voltage

vs. Case Temperature (Typical)

3.0

V_GE= 15 V

Pulse Test

I_C= 60 A

2.5

2.0

1.5

1.0

0.5

30 A

15 A

I_C= 1 mA

V_CE= 10 V

Pulse Test

25

25 50 75 100 125 150

Case Temperature Tc (C)

Diode Forward Current

vs. Diode Forward Voltage (Typical)

Typical Transfer Characteristics

120

100

200

160

120

Tc = 25C

Tc = 150C

25C

150C

V_CE= 0 V

Pulse Test

V_CE= 10 V

Pulse Test

Forward Voltage V_F(V)

Gate to Emitter Voltage V_GE(V)

R07DS1366EJ0200 Rev.2.00

Oct.05.2022

Page 5 of 11

1 2 3 456 7 8...12

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