Datasheet > RJH65T14DPQ-A0_15

RJH65T14DPQ-A0_15

更新时间： 2022-02-26 12:02:04

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
10页	315K
描述
650V - 50A - IGBT

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Data Sheet

RJH65T14DPQ-A0

650V - 50A - IGBT

Application: Induction Heating

Microwave Oven

R07DS1256EJ0100

Rev.1.00

Mar 16, 2015

Features



Optimized for current resonance application

Low collector to emitter saturation voltage

_CE(sat)= 1.45 V typ. (at I_C= 50 A, V_GE= 15 V, Ta = 25°C)



Built in fast recovery diode in one package

Trench gate and thin wafer technology

Outline

RENESAS Package code: PRSS0003ZH-A

(Package name: TO-247A)

1. Gate

2. Collector

3. Emitter

4. Collector

Absolute Maximum Ratings

(Tc = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

Ratings

Unit

650

30

V_GES

Note1

Collector current

Tc = 25 °C

I_C

100

Note1

Tc = 100 °C

I_C

Collector peak current

i_C(peak) ^Note1

180

Collector to emitter diode Tc = 25 °C

Forward current

I_DF

Tc = 100 °C

I_DF

Collector to emitter diode forward peak current

Collector dissipation

i_DF(peak) ^Note2

100

P_C

250

Junction to case thermal impedance (IGBT)

Junction to case thermal impedance (Diode)

Junction temperature

j-c ^Note3

j-cd ^Note3

Tj ^Note4

Tstg

0.6

°C/W

°C

1.33

175

Storage temperature

–55 to +150

Notes: 1. Pulse width limited by safe operating area.

2. PW  5 s, duty cycle  1%

3. Value at Tc = 25C

4. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.

Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.

R07DS1256EJ0100 Rev.1.00

Mar 16, 2015

Page 1 of 9

12 3 4 5 6 7...10

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