Datasheet > RJH65T14DPQ-A0_15

RJH65T14DPQ-A0_15

更新时间： 2022-02-26 12:02:04

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
10页	315K
描述
650V - 50A - IGBT

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RJH65T14DPQ-A0_15 数据手册

浏览型号RJH65T14DPQ-A0_15的Datasheet PDF文件第2页

浏览型号RJH65T14DPQ-A0_15的Datasheet PDF文件第3页

浏览型号RJH65T14DPQ-A0_15的Datasheet PDF文件第4页

浏览型号RJH65T14DPQ-A0_15的Datasheet PDF文件第6页

浏览型号RJH65T14DPQ-A0_15的Datasheet PDF文件第7页

RJH65T14DPQ-A0

Switching Characteristics (Typical) (1)

Switching Characteristics (Typical) (2)

1000

100

V_CC= 400 V, V_GE= 15 V

Rg = 10 Ω, Tc = 150°C

d(off)

d(on)

Eoff

Eon

V_CC= 400 V, V_GE= 15 V

Rg = 10 Ω, Tc = 150

0.1

100

Collector Current I_C(A)

(Inductive load)

Collector Current I_C(A)

(Inductive load)

Switching Characteristics (Typical) (4)

Switching Characteristics (Typical) (3)

V_CC= 400 V, V_GE= 15 V

1000

100

V_CC= 400 V, V_GE= 15 V

_C= 50 A, Tc = 150

°C

I_C= 50 A, Tc = 150

d(off)

d(on)

Eon

Eoff

100

Gate Registance Rg (Ω)

(Inductive load)

Switching Characteristics (Typical) (6)

Switching Characteristics (Typical) (5)

1000

100

V_CC= 400 V, V_GE= 15 V

I_C= 50 A, Rg = 10 Ω

d(off)

d(on)

Eon

Eoff

100

125

150

125

150

Case Temperature Tc (°C)

(Inductive load)

Case Temperature Tc (°C)

(Inductive load)

R07DS1256EJ0100 Rev.1.00

Mar 16, 2015

Page 5 of 9

1 2 3 456 7 8...10

下载PDF

与RJH65T14DPQ-A0_15相关器件

型号	品牌	描述	获取价格	数据表
RJH65T14DPQ-T0	RENESAS	Induction Heating	获取价格
RJH65T46DPQ-A0	RENESAS	Power Factor Correction circuit	获取价格
RJH65T46DPQ-T0	RENESAS	Power Factor Correction circuit	获取价格
RJH65T47DPQ-A0	RENESAS	Power Factor Correction circuit	获取价格
RJH65T47DPQ-T0	RENESAS	Power Factor Correction circuit	获取价格
RJH6674	NJSEMI	POWER TRANSISTORS	获取价格