Datasheet > RJH65T47DPQ-T0

RJH65T47DPQ-T0

更新时间： 2022-02-26 14:02:30

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	348K
描述
Power Factor Correction circuit

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RJH65T47DPQ-T0 数据手册

Preliminary Datasheet

RJH65T47DPQ-A0

R07DS1291EJ0101

Rev.1.01

650V - 45A - IGBT

Application: Power Factor Correction circuit

Oct 22, 2015

Features



Low collector to emitter saturation voltage

_CE(sat)= 1.8 V typ. (at I_C= 45 A, V_GE= 15 V, Ta = 25°C)



Built in fast recovery diode in one package

Trench gate and thin wafer technology (G7H series)

High speed switching

t_f= 45 ns typ. (at V_CC= 400 V, V_GE= 15 V , I_C= 45 A, Rg = 10 , Ta = 25°CInductive load)

Operation frequency (20kHz ≤ f ˂ 100kHz)



Not guarantee short circuit withstand time

Outline

RENESAS Package code: PRSS0003ZH-A

(Package name: TO-247A)

1. Gate

2. Collector

3. Emitter

4. Collector

Absolute Maximum Ratings

(Tc = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

Ratings

Unit

V_CES/ V_R

650

30

V_GES

Collector current

Tc = 25 °C

I_C

Tc = 100 °C

I_C

I_C(peak) ^Note1

I_DF

Collector peak current

335

Collector to emitter diode Tc = 25 °C

Forward current

Tc = 100 °C

I_DF

Collector to emitter diode forward peak current

Collector dissipation

I_DF(peak) ^Note1

100

Note 2

P_C

375

Junction to case thermal impedance (IGBT)

Junction to case thermal resistance (Diode)

Junction temperature

j-c

j-cd

Tj ^Note2

Tstg

0.40

1.33

175

°C/W

°C/ W

°C

Storage temperature

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.

Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.

R07DS1291EJ0101 Rev.1.01

Oct 22, 2015

Page 1 of 9

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