RHRG7570, RHRG7580, RHRG7590, RHRG75100
Data Sheet
April 1995
File Number 3923.1
75A, 700V - 1000V Hyperfast Diodes
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
RHRG7570, RHRG7580, RHRG7590 and RHRG75100
(TA49068) are hyperfast diodes with soft recovery character-
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175 C
istics (t
< 85ns). They have half the recovery time of
RR
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
• Planar Construction
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and elec-
trical noise in many power switching circuits reducing power
loss in the switching transistors.
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
Package
PACKAGING AVAILABILITY
JEDEC STYLE TO-247
PART NUMBER
RHRG7570
PACKAGE
TO-247
BRAND
RHRG7570
ANODE
CATHODE
CATHODE
RHRG7580
TO-247
TO-247
TO-247
RHRG7580
RHRG7590
RHRG75100
(BOTTOM
RHRG7590
SIDE METAL)
RHRG75100
NOTE: When ordering, use the entire part number.
Symbol
K
A
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
RHRG7570
RHRG7580
RHRG7590
RHRG75100 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . .V
700
700
700
75
800
800
800
75
900
900
900
75
1000
1000
1000
75
V
V
V
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . I
F(AV)
o
(T = +52 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 20kHz)
150
750
150
750
150
750
150
750
A
A
FSM
FSM
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . P
190
50
190
50
190
50
190
50
W
D
Avalanche Energy (L = 40mH) (See Figures 10 and 11). . . . E
mj
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . T
, T
-65 to +175
-65 to +175
-65 to +175
-65 to +175
C
STG
J
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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