5秒后页面跳转
RHRD650 PDF预览

RHRD650

更新时间: 2024-02-25 03:27:19
品牌 Logo 应用领域
瑞萨 - RENESAS 软恢复二极管超快速软恢复二极管局域网
页数 文件大小 规格书
4页 66K
描述
6A, 500V, SILICON, RECTIFIER DIODE

RHRD650 技术参数

是否无铅: 含铅生命周期:Active
Reach Compliance Code:unknown风险等级:5.75
其他特性:FREEWHEELING DIODE应用:HYPERFAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
湿度敏感等级:NOT SPECIFIED最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:50 W认证状态:COMMERCIAL
最大重复峰值反向电压:500 V最大反向恢复时间:0.035 µs
表面贴装:YES技术:AVALANCHE
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RHRD650 数据手册

 浏览型号RHRD650的Datasheet PDF文件第2页浏览型号RHRD650的Datasheet PDF文件第3页浏览型号RHRD650的Datasheet PDF文件第4页 
RHRD640, RHRD650, RHRD660, RHRD640S,  
RHRD650S, RHRD660S  
April 1995  
File Number 3746.2  
6A, 400V - 600V Hyperfast Diodes  
Features  
• Hyperfast with Soft Recovery<30ns  
RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S  
and RHRD660S are hyperfast diodes with soft recovery charac-  
o
• Operating Temperature+175 C  
teristics (t  
< 30ns). They have half the recovery time of  
• Reverse Voltage Up To600V  
• Avalanche Energy Rated  
• Planar Construction  
RR  
ultrafast diodes and are sil icon nitride passivated ion-implanted  
epitaxial planar construction.  
These devices are intended for use as freewheeling/clamping  
diodes and rectifiers in a variety of switching power supplies and  
other power switching applications. Their low stored charge and  
hyperfast soft recovery minimize ringing and electrical noise in  
many power switching circuits reducing power loss in the switch-  
ing transistors.  
Applications  
• Switching Power Supplies  
• Power Switching Circuits  
• General Purpose  
Package  
Ordering Information  
JEDEC STYLE TO-251  
ANODE  
PACKAGE AVAILABILITY  
CATHODE  
PART NUMBER  
RHRD640  
PACKAGE  
TO-251  
BRAND  
RHR640  
RHR650  
RHR660  
RHR640  
RHR650  
RHR660  
CATHODE  
(FLANGE)  
RHRD650  
TO-251  
TO-251  
TO-252  
TO-252  
TO-252  
RHRD660  
RHRD640S  
RHRD650S  
RHRD660S  
JEDEC STYLE TO-252  
CATHODE  
(FLANGE)  
CATHODE  
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain  
the TO-252 variant in tape and reel, e.g. RHRD660S9A.  
ANODE  
Formerly developmental type TA49057.  
Symbol  
K
A
o
Absolute Maximum Ratings  
T
= +25 C, Unless Otherwise Specified  
C
RHRD640  
RHRD650  
RHRD660  
RHRD640S  
RHRD650S  
RHRD660S  
UNITS  
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . V  
400  
400  
400  
6
500  
500  
500  
6
600  
600  
600  
6
V
V
V
A
RRM  
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . V  
RWM  
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
R
Average Rectified Forward Current . . . . . . . . . . . . . . . I  
F(AV)  
o
(T = +152 C)  
C
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . I  
(Square Wave, 20kHz)  
12  
60  
12  
60  
12  
60  
A
A
FSM  
FSM  
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . I  
(Halfwave, 1 Phase, 60Hz)  
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P  
50  
10  
50  
10  
50  
10  
W
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . E  
mj  
AVL  
o
Operating and Storage Temperature . . . . . . . . . . . .T  
, T  
-65 to +175  
-65 to +175  
-65 to +175  
C
STG  
J
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1

与RHRD650相关器件

型号 品牌 获取价格 描述 数据表
RHRD650S RENESAS

获取价格

6A, 500V, SILICON, RECTIFIER DIODE
RHRD650S ROCHESTER

获取价格

6A, 500V, SILICON, RECTIFIER DIODE
RHRD660 INTERSIL

获取价格

6A, 600V Hyperfast Diodes
RHRD660 FAIRCHILD

获取价格

6A, 600V Hyperfast Diodes
RHRD660S INTERSIL

获取价格

6A, 600V Hyperfast Diodes
RHRD660S RENESAS

获取价格

6A, 600V, SILICON, RECTIFIER DIODE, TO-252
RHRD660S FAIRCHILD

获取价格

6A, 600V Hyperfast Diodes
RHRD660S9A FAIRCHILD

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252, TO-252 V
RHRD660S9A RENESAS

获取价格

6A, 600V, SILICON, RECTIFIER DIODE
RHRD660S9A ONSEMI

获取价格

6A,600V,超快速二极管