RHRD660S9A_F085
Data Sheet
July 2011
6A, 600V Hyperfast Diodes
Features
The RHRD660S9A_F085 is hyperfast diodes with
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
soft recovery characteristics (t < 30ns). It has half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
o
rr
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 C
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
This device is intended for use as freewheeling/
• Planar Construction
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Its low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Formerly developmental type TA49057.
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRD660S9A_F085
TO-252
RHR660
JEDEC STYLE TO-252
CATHODE
(FLANGE)
CATHODE
ANODE
Symbol
K
A
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
RHRD660S9A_F085
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
600
600
600
6
V
V
V
A
RRM
RWM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
o
(T = 152 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
12
60
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
50
10
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
, T
STG
-65 to 175
C
J
o
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
C
L
o
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
PKG
©2011 Fairchild Semiconductor Corporation
RHRD660S9A_F085
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