RHRD660, RHRD660S
Data Sheet
January 2002
6A, 600V Hyperfast Diodes
Features
The RHRD660 and RHRD660S are hyperfast diodes with
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
soft recovery characteristics (t < 30ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
o
rr
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 C
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Formerly developmental type TA49057.
Packaging
Ordering Information
JEDEC STYLE TO-251
PART NUMBER
PACKAGE
TO-251
TO-252
BRAND
ANODE
RHRD660
RHR660
RHR660
CATHODE
RHRD660S
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A.
Symbol
JEDEC STYLE TO-252
K
CATHODE
(FLANGE)
CATHODE
ANODE
A
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
RHRD660, RHRD660S
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
600
600
600
6
V
V
V
A
RRM
RWM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
o
(T = 152 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
12
60
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
50
10
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
, T
STG
-65 to 175
C
J
o
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
C
L
o
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
PKG
©2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B