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RHRD660S9A PDF预览

RHRD660S9A

更新时间: 2024-01-03 09:07:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 软恢复二极管超快速软恢复二极管局域网
页数 文件大小 规格书
5页 368K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252, TO-252 VARIANT, 3 PIN

RHRD660S9A 技术参数

生命周期:Transferred零件包装代码:TO-252
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.39
其他特性:FREEWHEELING DIODE应用:HYPERFAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.1 VJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:50 W认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向电流:100 µA
最大反向恢复时间:0.035 µs表面贴装:YES
技术:AVALANCHE端子形式:GULL WING
端子位置:SINGLEBase Number Matches:1

RHRD660S9A 数据手册

 浏览型号RHRD660S9A的Datasheet PDF文件第1页浏览型号RHRD660S9A的Datasheet PDF文件第2页浏览型号RHRD660S9A的Datasheet PDF文件第4页浏览型号RHRD660S9A的Datasheet PDF文件第5页 
RHRD660, RHRD660S  
Typical Performance Curves (Continued)  
30  
25  
50  
40  
30  
20  
10  
0
o
o
T
= 25 C, dI /dt = 200A/µs  
F
T
= 100 C, dI /dt = 200A/µs  
C
C
F
t
t
rr  
rr  
20  
15  
t
a
t
a
10  
5
t
b
t
b
0
0.5  
1
6
0.5  
1
6
I , FORWARD CURRENT (A)  
I , FORWARD CURRENT (A)  
F
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT  
rr  
FIGURE 4. t , t AND t CURVES vs FORWARD CURRENT  
a
b
rr  
a
b
75  
60  
45  
30  
15  
0
6
5
4
3
2
1
0
o
T
= 175 C, dI /dt = 200A/µs  
F
C
DC  
t
rr  
SQ. WAVE  
t
a
t
b
140  
145  
150  
155  
160  
165  
o
170  
175  
0.5  
1
6
I , FORWARD CURRENT (A)  
T
, CASE TEMPERATURE ( C)  
F
C
FIGURE 5. t , t AND t CURVES vs FORWARD CURRENT  
rr  
FIGURE 6. CURRENT DERATING CURVE  
a
b
50  
40  
30  
20  
10  
0
0
50  
100  
150  
200  
V
, REVERSE VOLTAGE (V)  
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE  
©2002 Fairchild Semiconductor Corporation  
RHRD660, RHRD660S Rev. B  

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