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RGP25G-E3 PDF预览

RGP25G-E3

更新时间: 2024-11-16 14:44:27
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 299K
描述
DIODE 2.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode

RGP25G-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.34
其他特性:LOW LEAKAGE CURRENT应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:2.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.15 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

RGP25G-E3 数据手册

 浏览型号RGP25G-E3的Datasheet PDF文件第2页浏览型号RGP25G-E3的Datasheet PDF文件第3页浏览型号RGP25G-E3的Datasheet PDF文件第4页 
RGP25A thru RGP25M  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
2.5 A  
50 V to 1000 V  
100 A  
150 ns, 250 ns, 500 ns  
5.0 µA  
IR  
*
d
e
t
VF  
1.3 V  
n
e
t
a
Tj max.  
175 °C  
P
DO-201AD  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly by  
Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-201AD, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current, typical I less than 0.2 µA  
R
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For general purpose of medium frequency rectifica-  
tion  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol RGP25A RGP25B RGP25D RGP25G RGP25J RGP25K RGP25M  
Unit  
V
Maximum repetitive peak reverse  
voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
2.5  
420  
600  
560  
800  
700  
V
V
A
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified  
current 0.375" (9.5 mm) lead length  
at TA = 55 °C  
IF(AV)  
Peak forward surge current 8.3 ms  
single half sine-wave  
superimposed on rated load  
IFSM  
100  
100  
A
Maximum full load reverse current,  
full cycle average 0.375" (9.5 mm)  
lead length at TA = 55 °C  
IR(AV)  
µA  
Operating junction and storage  
temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88703  
19-Sep-05  
www.vishay.com  
1

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