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RGP25J-E3/54 PDF预览

RGP25J-E3/54

更新时间: 2024-11-16 15:49:35
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 76K
描述
DIODE 2.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

RGP25J-E3/54 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.27
其他特性:LOW LEAKAGE CURRENT应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:2.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.25 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

RGP25J-E3/54 数据手册

 浏览型号RGP25J-E3/54的Datasheet PDF文件第2页浏览型号RGP25J-E3/54的Datasheet PDF文件第3页浏览型号RGP25J-E3/54的Datasheet PDF文件第4页 
RGP25A, RGP25B, RGP25D, RGP25G, RGP25J, RGP25K,  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Plastic Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
SUPERECTIFIER®  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current, typical IR less than 0.2 μA  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
DO-201AD  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For general purpose of medium frequency rectification.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.5 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
IFSM  
100 A  
150 ns, 250 ns, 500 ns  
5.0 μA  
Case: DO-201AD, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
trr  
IR  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF  
1.3 V  
TJ max.  
Package  
Diode variation  
175 °C  
DO-201AD  
Single die  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RGP25A RGP25B RGP25D RGP25G  
RGP25J  
RGP25K RGP25M UNIT  
Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward  
rectified current 0.375" (9.5 mm)  
lead length at TA = 55 °C  
IF(AV)  
2.5  
A
A
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
Maximum full load reverse  
current, full cycle average 0.375"  
(9.5 mm) lead length at TA = 55 °C  
IR(AV)  
100  
μA  
°C  
Operating junction and storage  
temperature range  
TJ, TSTG  
-65 to +175  
Revision: 10-Jun-16  
Document Number: 88703  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

RGP25J-E3/54 替代型号

型号 品牌 替代类型 描述 数据表
RGP25J-E3/73 VISHAY

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DIODE 2.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2,

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