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RGP25D-E3/54 PDF预览

RGP25D-E3/54

更新时间: 2024-11-16 14:44:27
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 71K
描述
DIODE 2.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

RGP25D-E3/54 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.29
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:2.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.15 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

RGP25D-E3/54 数据手册

 浏览型号RGP25D-E3/54的Datasheet PDF文件第2页浏览型号RGP25D-E3/54的Datasheet PDF文件第3页浏览型号RGP25D-E3/54的Datasheet PDF文件第4页 
RGP25A thru RGP25M  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current, typical IR less than 0.2 μA  
• High forward surge capability  
SUPERECTIFIER®  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
DO-201AD  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For general purpose of medium frequency rectification.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.5 A  
MECHANICAL DATA  
VRRM  
IFSM  
trr  
50 V to 1000 V  
100 A  
Case: DO-201AD, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
150 ns, 250 ns, 500 ns  
5.0 μA  
IR  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
VF  
1.3 V  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
TJ max.  
175 °C  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RGP25A RGP25B RGP25D RGP25G  
RGP25J  
RGP25K RGP25M UNIT  
Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward  
rectified current 0.375" (9.5 mm)  
lead length at TA = 55 °C  
IF(AV)  
2.5  
A
A
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
Maximum full load reverse  
current, full cycle average 0.375"  
(9.5 mm) lead length at TA = 55 °C  
IR(AV)  
100  
μA  
°C  
Operating junction and storage  
temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number: 88703  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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