5秒后页面跳转
RGP10M-E3/23 PDF预览

RGP10M-E3/23

更新时间: 2024-01-22 10:49:41
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 86K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

RGP10M-E3/23 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.43Is Samacsys:N
其他特性:FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.5 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

RGP10M-E3/23 数据手册

 浏览型号RGP10M-E3/23的Datasheet PDF文件第2页浏览型号RGP10M-E3/23的Datasheet PDF文件第3页浏览型号RGP10M-E3/23的Datasheet PDF文件第4页 
RGP10A thru RGP10M  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for High Reliability  
condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly  
by Patent No. 3,930,306  
DO-204AL (DO-41)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters and free-wheeling diodes for  
consumer, automotive and telecommunication.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 1000 V  
30 A  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL 94V-0 flammability rating  
150 ns, 250 ns, 500 ns  
5.0 µA  
IR  
VF  
1.3 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
Tj max.  
175 °C  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K  
RGP10M  
UNIT  
Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified  
current 0.375" (9.5 mm) lead length  
at TA = 55 °C  
IF(AV)  
1.0  
30  
A
A
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load  
IFSM  
Maximum full load reverse current,  
full cycle average 0.375" (9.5 mm)  
lead length TA = 55 °C  
IR(AV)  
100  
µA  
°C  
Operating junction and storage  
temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number 88700  
30-Aug-06  
www.vishay.com  
1

与RGP10M-E3/23相关器件

型号 品牌 获取价格 描述 数据表
RGP10M-E3/53 VISHAY

获取价格

DIODE GEN PURP 1KV 1A DO204AL
RGP10M-E3/54 VISHAY

获取价格

DIODE GPP 1A 1000V 500NS DO-41
RGP10M-E3/73 VISHAY

获取价格

Diode Switching 1KV 1A 2-Pin DO-204AL Ammo
RGP10ME-E3/23 VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC,
RGP10ME-E3/54 VISHAY

获取价格

DIODE GEN PURP 1KV 1A DO204AL
RGP10ME-E3/73 VISHAY

获取价格

DIODE GEN PURP 1KV 1A DO204AL
RGP10ME-E3/91 VISHAY

获取价格

DIODE GEN PURP 1KV 1A DO204AL
RGP10MEHE3/54 VISHAY

获取价格

DIODE GEN PURP 1KV 1A DO204AL
RGP10MEHE3/73 VISHAY

获取价格

DIODE GEN PURP 1KV 1A DO204AL
RGP10MEHE3/91 VISHAY

获取价格

DIODE GEN PURP 1KV 1A DO204AL