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RGP10MHM3/54 PDF预览

RGP10MHM3/54

更新时间: 2024-02-06 05:02:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 69K
描述
DIODE GEN PURP 1KV 1A DO204AL

RGP10MHM3/54 技术参数

生命周期:Obsolete零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
参考标准:AEC-Q101最大重复峰值反向电压:1000 V
最大反向恢复时间:0.5 µs表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIALBase Number Matches:1

RGP10MHM3/54 数据手册

 浏览型号RGP10MHM3/54的Datasheet PDF文件第2页浏览型号RGP10MHM3/54的Datasheet PDF文件第3页浏览型号RGP10MHM3/54的Datasheet PDF文件第4页浏览型号RGP10MHM3/54的Datasheet PDF文件第5页 
RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Plastic Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Cavity-free glass-passivated junction  
SUPERECTIFIER®  
• Fast switching for high efficiency  
• Low leakage current  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DO-41 (DO-204AL)  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for consumer  
and telecommunication.  
IF(AV)  
1.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
IFSM  
trr  
30 A  
150 ns, 250 ns, 500 ns  
5.0 μA  
MECHANICAL DATA  
Case: DO-41 (DO-204AL), molded epoxy over glass body  
IR  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VF  
1.3 V  
TJ max.  
Package  
175 °C  
DO-41 (DO-204AL)  
Single  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Circuit configuration  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M UNIT  
Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified  
current 0.375" (9.5 mm) lead length  
at TA = 55 °C  
IF(AV)  
1.0  
30  
A
A
Peak forward surge current 8.3 ms  
single half sine-wave  
IFSM  
superimposed on rated load  
Maximum full load reverse current,  
full cycle average 0.375" (9.5 mm)  
lead length TA = 55 °C  
IR(AV)  
100  
μA  
°C  
Operating junction and storage  
temperature range  
TJ, TSTG  
-65 to +175  
Revision: 29-Apr-2020  
Document Number: 88700  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

RGP10MHM3/54 替代型号

型号 品牌 替代类型 描述 数据表
RGP10M-M3/54 VISHAY

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DIODE GEN PURP 1KV 1A DO204AL

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