Datasheet > RGP10MT26R

RGP10MT26R

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	46K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41

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RGP10MT26R 数据手册

RGP10A - RGP10M

Features

• 1.0 ampere operation at T_A= 55°C

with no thermal runaway.

• High temperature metallurgically

bonded construction.

• Glass passivated cavity-free junction.

• Typical I_Rless than 1µA.

DO-41

COLOR BAND DENOTES CATHODE

• Fast switching for high efficiency.

Fast Rectifiers (Glass Passivated)

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

10A 10B 10D 10G 10J

10K

10M

V_RRM

I_F(AV)

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current,

100 200 400 600

800 1000

1.0

.375 " lead length @ T = 55 C

I_FSM

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

Storage Temperature Range

-65 to +175

°C

T_stg

T_J

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

3.0

R_θJA

°C/W

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Device

Units

10A 10B 10D 10G 10J

10K

10M

V_F

t_rr

Forward Voltage @ 1.0 A

1.3

Reverse Recovery Time

150

250

500

I_F= 0.5 A, I_R= 1.0 A, I_rr= 0.25 A

I_R

5.0

200

µA

Reverse Current @ rated V_RT_A= 25°C

T_A= 150°C

C_T

Total Capacitance

V_R= 4.0 V, f = 1.0 MHz

2001 Fairchild Semiconductor Corporation

RPG10A - RPG10M, Rev. C

12 3

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