Datasheet > RGP10M-T

RGP10M-T

更新时间： 2024-01-09 15:35:54

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	108K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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RGP10M-T 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.82

RGP10M-T 数据手册

RGP10A

THRU

RGP10M

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

1.0 Amp Glass

Passivated Junction

Fast Recovery

Rectifiers

Features

High temperature metallurgically bonded construction

Glass passivated cavity-free junction

1.0 ampere operation at T = 55^OC with no

thermal runaway.

Typical I less than 0.1uA

Fast switching for high efficiency

50 to 1000 Volts

DO-41

Maximum Ratings

Operating Temperature: -55^OC to +150^CC

Storage Temperature: -55^CC to +150^CC

Typical Thermal Resistance: 55^OC/W Junction to Ambient

Maximum

Recurrent

Maximum DC

MCC

Maximum

Blocking

Part Number

Peak Reverse

Voltage

RMS Voltage

Voltage

RGP10A

RGP10B

RGP10D

RGP10G

RGP10J

RGP10K

RGP10M

50V

100V

200V

400V

600V

800V

1000V

35V

70V

50V

100V

200V

400V

600V

800V

1000V

Cathode

Mark

140V

280V

420V

560V

700V

Electrical Cha racteristics @ 25^OC Unless Otherwise Specified

T = 55^OC

Maximum Average

Forward Current

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

I_F(AV)

I_FSM

V_F

1.0 A

30A

8.3ms, half sine

I_FM= 1.0A;

1.3V

DIMENSIONS

T = 25^OC

INCHES

MIN

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

NOTE

.166

4.10

2.00

.70

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.080

.028

I_R

5.0uA

T = 25^OC

200uA T = 150^OC

1.000

25.40

---

Typical Junction

Capacitance

C_J

15pF

Measured at

1.0MHz, V_R=4.0V

Maximum Reverse

Recovery Time

RGP10A-10G

RGP10J

T =25^OC

I_F=0.5A

I_R=1.0A

I_RR=0.25A

Trr

150nS

250nS

500nS

RGP10K-10M

www.mccsemi.com

Revision: 3

2003/04/30

12 3

中文翻译

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