Datasheet > RGP10M-HE3/73

RGP10M-HE3/73

更新时间： 2024-02-10 15:10:10

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威世 - VISHAY		/
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RGP10M-HE3/73 数据手册

RGP10A thru RGP10M

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

• Low leakage current

SUPERECTIFIER^®

DO-204AL (DO-41)

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for consumer,

automotive, and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

V_RRM

I_FSM

t_rr

50 V to 1000 V

30 A

150 ns, 250 ns, 500 ns

5.0 μA

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

I_R

V_F

1.3 V

T_Jmax.

175 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M UNIT

Maximum repetitive peak

reverse voltage

V_RRM

100

200

400

600

800

1000

Maximum RMS voltage

V_RMS

V_DC

140

200

280

400

420

600

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward rectified

current 0.375" (9.5 mm) lead length

at T_A= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms

single half sine-wave

I_FSM

superimposed on rated load

Maximum full load reverse current,

full cycle average 0.375" (9.5 mm)

lead length T_A= 55 °C

I_R(AV)

100

μA

°C

Operating junction and storage

temperature range

T_J, T_STG

- 65 to + 175

Document Number: 88700

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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