Datasheet > RGP10M-E3

RGP10M-E3

更新时间： 2024-09-30 08:24:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	320K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN

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数据手册

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RGP10M-E3 数据手册

RGP10A thru RGP10M

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

50 V to 1000 V

30 A

150 ns, 250 ns, 500 ns

5.0 µA

I_R

V_F

1.3 V

T_jmax.

175 °C

*Glass Encapsulation

DO-204AL (DO-41)

technique is covered by

Patent No. 3,996,602,

brazed-lead assembly

to Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

condition

Case: DO-204AL, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

• Low leakage current

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for

consumer, automotive and Telecommunication

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M

Unit

Maximum repetitive peak reverse

voltage

V_RRM

100

200

400

600

800

1000

Maximum RMS voltage

V_RMS

V_DC

140

200

280

400

1.0

420

600

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward rectified

current 0.375" (9.5 mm) lead length

at T_A= 55 °C

I_F(AV)

Peak forward surge current 8.3 ms

single half sine-wave superimposed

on rated load

I_FSM

Maximum full load reverse current,

full cycle average 0.375" (9.5 mm)

lead length T_A= 55 °C

I_R(AV)

100

µA

Operating junction and storage

temperature range

T_J,T_STG

- 65 to + 175

°C

Document Number 88700

19-Sep-05

www.vishay.com

12 3 4

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与RGP10M-E3相关器件

型号	品牌	获取价格	描述	数据表
RGP10M-E3/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC,
RGP10M-E3/53	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
RGP10M-E3/54	VISHAY	获取价格	DIODE GPP 1A 1000V 500NS DO-41
RGP10M-E3/73	VISHAY	获取价格	Diode Switching 1KV 1A 2-Pin DO-204AL Ammo
RGP10ME-E3/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC,
RGP10ME-E3/54	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
RGP10ME-E3/73	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
RGP10ME-E3/91	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
RGP10MEHE3/54	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
RGP10MEHE3/73	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL