Datasheet > RGP10M-E

RGP10M-E

更新时间： 2024-02-11 07:55:24

品牌	Logo	应用领域
海湾 - GULFSEMI		开关
页数	文件大小	规格书
2页	67K
描述
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 1000V CURRENT: 1.0A

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中文翻译

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技术参数
数据手册

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RGP10M-E 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.59
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

RGP10M-E 数据手册

RGP10M-E

SINTERED GLASS JUNCTION

FAST SWITCHING PLASTIC RECTIFIER

VOLTAGE: 1000V

CURRENT: 1.0A

DO-41\DO-204AL

FEATURE

High temperature metallurgically bonded construction

Sintered glass cavity free junction

Capability of meeting environmental standard of MIL-S-19500

High temperature soldering guaranteed

350°C /10sec/0.375”lead length at 5 lbs tension

Operate at Ta =55°C with no thermal run away

Typical Ir<0.1µA

Halogen Free

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Halogen

Free Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

RGP10M-E

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Vrrm

Vrms

Vdc

1000

700

Maximum DC blocking Voltage

1000

Maximum Average Forward Rectified Current

3/8”lead length at Ta =55°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rated load

Maximum Forward Voltage at rated Forward

Current and 25°C

If(av)

Ifsm

1.0

30.0

1.3

Maximum full load reverse current full cycle

average at 55°C Ambient

Ir(av)

100.0

µA

5.0

200.0

500

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25°C

Ta =150°C

µA

Maximum Reverse Recovery Time

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

(Note 2)

(Note 3)

Trr

15.0

Rth(ja)

Tstg, Tj

55.0

°C /W

°C

Storage and Operating Junction Temperature

Note:

-65 to +175

1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted

Rev.A1

www.gulfsemi.com

中文翻译

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与RGP10M-E相关器件

型号	品牌	获取价格	描述	数据表
RGP10ME/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
RGP10M-E3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, LEAD FREE, PLASTIC, DO-41
RGP10M-E3/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC,
RGP10M-E3/53	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
RGP10M-E3/54	VISHAY	获取价格	DIODE GPP 1A 1000V 500NS DO-41
RGP10M-E3/73	VISHAY	获取价格	Diode Switching 1KV 1A 2-Pin DO-204AL Ammo
RGP10ME-E3/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC,
RGP10ME-E3/54	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
RGP10ME-E3/73	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
RGP10ME-E3/91	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL

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