5秒后页面跳转
RGP10M PDF预览

RGP10M

更新时间: 2024-01-23 21:13:25
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 38K
描述
1.0 Ampere Glass Passivated Fast Recovery Rectifiers

RGP10M 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.59
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RGP10M 数据手册

 浏览型号RGP10M的Datasheet PDF文件第2页浏览型号RGP10M的Datasheet PDF文件第3页 
Discr ete P OWER & Sign a l  
Tech n ologies  
RGP10A - RGP10M  
Features  
1.0 min (25.4)  
1.0 ampere operation at TA = 55°C  
with no thermal runaway.  
Dimensions in  
inches (mm)  
High temperature metallurgically  
bonded construction.  
0.205 (5.21)  
0.160 (4.06)  
Glass passivated cavity-free junction.  
Typical IR less than 1µA.  
DO-41  
0.107 (2.72)  
0.080 (2.03)  
COLOR BAND DENOTES CATHODE  
0.034 (0.86)  
0.028 (0.71)  
Fast switching for high efficiency.  
1.0 Ampere Glass Passivated Fast Recovery Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
Average Rectified Current  
.375 " lead length @ TL = 55°C  
Peak Forward Surge Current  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
1.0  
A
if(surge)  
30  
A
PD  
2.5  
17  
50  
W
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
RθJA  
Tstg  
TJ  
Storage Temperature Range  
-65 to +175  
-65 to +175  
°C  
°C  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
10A  
10B  
100  
70  
10D  
200  
140  
200  
10G  
400  
280  
400  
10J  
600  
420  
600  
10K  
800  
560  
800  
10M  
1000  
700  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
V
V
V
100  
1000  
DC Reverse Voltage (Rated VR)  
Maximum Reverse Current  
5.0  
200  
A
A
µ
µ
@ rated VR  
T = 25 C  
°
A
T = 150 C  
°
A
Maximum Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
Maximum Forward Voltage @ 1.0 A  
150  
250  
500  
nS  
1.3  
15  
V
Typical Junction Capacitance  
VR = 4.0 V, f = 1.0 MHz  
pF  
1999 Fairchild Semiconductor Corporation  
RPG10A - RPG10M, Rev. A  

RGP10M 替代型号

型号 品牌 替代类型 描述 数据表
RGP10M ONSEMI

类似代替

1.0A快速恢复整流器
FR107-T DIODES

类似代替

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N4007G ONSEMI

功能相似

Axial Lead Standard Recovery Rectifiers

与RGP10M相关器件

型号 品牌 获取价格 描述 数据表
RGP10M.TR FAIRCHILD

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41
RGP10M/73 VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
RGP10MA ZOWIE

获取价格

SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER
RGP10MA TAITRON

获取价格

1.0A Sintered Glass Passivated Fast Recovery Rectifier
RGP10M-A MCC

获取价格

Rectifier Diode,
RGP10MAH ZOWIE

获取价格

SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER
RGP10M-AP MCC

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
RGP10M-B MCC

获取价格

Rectifier Diode
RGP10M-E GULFSEMI

获取价格

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 1000V CURRENT: 1.0A
RGP10ME/23 VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN