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RFP22N10 PDF预览

RFP22N10

更新时间: 2024-11-11 22:43:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 368K
描述
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

RFP22N10 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.25
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):22 A最大漏极电流 (ID):22 A
最大漏源导通电阻:0.08 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RFP22N10 数据手册

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RFP22N10, RF1S22N10SM  
Data Sheet  
January 2002  
File Number 2385.3  
22A, 100V, 0.080 Ohm, N-Channel Power  
MOSFETs  
Features  
• 22A, 100V  
These N-Channel power MOSFETs are manufactured using  
the MegaFET process. This process, which uses feature  
sizes approaching those of LSI integrated circuits gives  
optimum utilization of silicon, resulting in outstanding  
performance. They were designed for use in applications  
such as switching regulators, switching converters, motor  
drivers, and relay drivers. These transistors can be operated  
directly from integrated circuits.  
• r = 0.080Ω  
DS(ON)  
• UIS SOA Rating Curve (Single Pulse)  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Formerly developmental type TA9845.  
o
• 175 C Operating Temperature  
• Related Literature  
Ordering Information  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
PART NUMBER  
PACKAGE  
TO-220AB  
TO-263AB  
BRAND  
RFP22N10  
F1S22N10  
RFP22N10  
Symbol  
RF1S22N10SM  
D
NOTE: When ordering use the entire part number. Add the suffix, 9A,  
to obtain theTO-263AB variant in tape and reel, e.g. RF1S22N10SM9A.  
G
S
Packaging  
JEDEC TO-220AB  
JEDEC TO-263AB  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
DRAIN  
(FLANGE)  
GATE  
SOURCE  
©2002 Fairchild Semiconductor Corporation  
RFP22N10, RF1S22N10SM Rev. B  

RFP22N10 替代型号

型号 品牌 替代类型 描述 数据表
STD70N10F4 STMICROELECTRONICS

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